1楼 pxq123
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|  发帖时间 - 2006/2/24 11:32:14
| The growth simulations of synthetic quartz crystals grown on seeds with industrialized sizes and orientations were
shown on the procedure by means of the setting of virtual lengths between the seed center and principal crystal faces to
be grown. The virtual lengths needed for simulations are calculated on the given sizes and shapes of seeds, X-bar, Y-bar
and rectangular Z-plate. The simulations of growth processes are executed as a function of growth time under the model
values of growth rates on principal crystal faces, m, R, r, Z, and the so-called S. By the comparison of geometrical sizes
of as-grown crystal faces with simulated faces, the growth rates of principal faces are quantitatively evaluated in the
commercially produced quartzcrystals grown from the rectangular Z-plate seeds. The growth rates of R- and r-faces at
the upper and lower sides of grown crystals show somewhat diferent values which may be due to the direction of
convection fow in autoclave.
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